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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS216 High-speed switching diode
Product specification Supersedes data of 1996 Apr 03 1999 Apr 22
Philips Semiconductors
Product specification
High-speed switching diode
FEATURES * Small ceramic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA.
handbook, 4 columns
BAS216
DESCRIPTION The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular ceramic SMD SOD110 package.
APPLICATIONS * High-speed switching in e.g. surface mounted circuits.
cathode mark k k a
a
bottom view Marking code: A6.
side view
top view
MAM139
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; see Fig.2; note 1 - - - - -65 - 4 1 0.5 400 +150 150 A A A mW C C note 1 CONDITIONS - - - - MIN. MAX. 85 75 250 500 V V mA mA UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
High-speed switching diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - - - - - - 30 1 30 50 1.5 4 - - - - 715 855 1 1.25 CONDITIONS MIN.
BAS216
MAX.
UNIT mV mV V V nA A A A pF ns
Vfr
forward recovery voltage
-
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 200 315 UNIT K/W K/W
1999 Apr 22
3
Philips Semiconductors
Product specification
High-speed switching diode
GRAPHICAL DATA
BAS216
MSA570
500
handbook, halfpage
300
MBG382
P tot (mW)
IF (mA)
(1) (2) (3)
200
250
100
0 0 100 Tamb ( C)
o
0 200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.2
Maximum permissible total power dissipation as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 Apr 22
4
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
10 5 IR (nA) 10 4
MSA563
handbook, halfpage
0.6
MBH285
Cd (pF) V R = 75 V 0.5
75 V 10 3 0.4
10 2
25 V 0.2
10 0 100 T j ( o C) 200
0 0 4 8 12 V (V) 16 R
Dotted line: maximum values. Solid line: typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1999 Apr 22
5
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R S = 50
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1999 Apr 22
6
Philips Semiconductors
Product specification
High-speed switching diode
MOUNTING Reflow soldering Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.9). Wave soldering
BAS216
Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.10).
handbook, halfpage
3.00
handbook, halfpage
3.40
1.25 1.25
1.10 1.00 1.00
MGC119
1.10
MGC126
Dimensions in mm.
Dimensions in mm.
Fig.9 SOD110 reflow soldering pattern.
Fig.10 SOD110 wave soldering pattern.
1999 Apr 22
7
Philips Semiconductors
Product specification
High-speed switching diode
PACKAGE OUTLINE Very small ceramic rectangular surface mounted package
D E
BAS216
SOD110
A
y cathode identifier
DIMENSIONS (mm are the original dimensions)
1
2
0 0.5 scale 1 mm
UNIT mm
A max. 1.6
D 2.10 1.90
E 1.40 1.10
y 0.1
OUTLINE VERSION SOD110
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-14
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Apr 22
8
Philips Semiconductors
Product specification
High-speed switching diode
NOTES
BAS216
1999 Apr 22
9
Philips Semiconductors
Product specification
High-speed switching diode
NOTES
BAS216
1999 Apr 22
10
Philips Semiconductors
Product specification
High-speed switching diode
NOTES
BAS216
1999 Apr 22
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/3180/04/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05749

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